Pr3+-doped chalcogenide thin films deposited by Pld technique

The results of the pulsed laser deposition (PLD) of RE-doped GeS2-based (GeS2-Ga2S3-CsI) chalcogenide glass thin films are reported. The films were formed by using the nanosecond pulsed excimer laser deposition. The compositional, morphological, and structural properties of the films were characterized by the Rutherford backscattering spectroscopic (RBS), scanning electron microscopic (SEM), and X-ray diffraction techniques. The optical transmission spectra determined by spectrophotometry were recorded in the 200-2500 nm wavelength range. The dispersion of the optical constants (n and k) together with the film thickness were calculated from the transmission spectra using a commercial software code. The refractive indices of the waveguide structures were measured by the prism-coupling technique (m-lines). A preliminary analysis of photoluminescence is also reported for a Pr-doped thin film.