HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays

被引：12

作者：

Bertaud, T. ^{[1
]}

Walczyk, D. ^{[1
]}

Sowinska, M. ^{[1
]}

Wolansky, D. ^{[1
]}

Tillack, B. ^{[1
,2
]}

Schoof, G. ^{[1
]}

Stikanov, V. ^{[3
]}

Wenger, Ch. ^{[1
]}

Thiess, S. ^{[4
]}

Schroeder, T. ^{[1
,5
]}

Walczyk, Ch. ^{[1
]}

机构：

[1] IHP, Technol Pk 25, D-15236 Frankfurt, Germany

[2] Tech Univ Berlin, D-10587 Berlin, Germany

[3] IASA, UA-03056 Kiev, Ukraine

[4] DESY, D-22607 Hamburg, Germany

[5] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany

来源：

DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期

关键词：

IMPACT;

D O I：

10.1149/05004.0021ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The Ti/HfO2/TiN-based system is a very promising candidate for Resistance change Random Access Memory (RRAM). By combining material science studies and integration in a Si CMOS technology, we succeeded to give quantitative insight in the resistive switching mechanism and to process a 4 kbit array with 1T1R RRAM devices. In particular, in-operando hard X-ray photoelectron spectroscopy allows to describe the resistive switching mechanism by a push-pull model of oxygen vacancies as a function of voltage polarity. Moreover, the characterization of integrated 600x600 nm(2) TiN/Ti/HfO2/TiN 1T1R devices in the pulse-induced mode and the recent realization of a 4 kbit memory array have demonstrated promising performance for embedded non-volatile memory applications.

引用

页码：21 / 26

页数：6

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