Heterogeneity of Memory Marginal Zone B Cells

被引:26
|
作者
Hendricks, Jacobus [1 ,2 ]
Bos, Nicolaas A. [1 ]
Kroese, Frans G. M. [1 ]
机构
[1] Univ Kwazulu Natal, Discipline Human Physiol, Westville Campus, Durban, South Africa
[2] Univ Groningen, Univ Med Ctr Groningen, Dept Rheumatol & Clin Immunol, Groningen, Netherlands
基金
美国国家卫生研究院;
关键词
memory B cells; marginal zone (MZ); immunoglobulin heavy (IGH) chain genes; spleen; rat; VARIABLE REGION GENES; INNATE LYMPHOID-CELLS; GERMINAL-CENTERS; PLASMA-CELLS; HUMAN SPLEEN; ANTIBODY REPERTOIRE; IMMUNE-RESPONSES; FATE DECISION; HIV-INFECTION; IMMUNOGLOBULIN;
D O I
10.1615/CritRevImmunol.2018024985
中图分类号
R392 [医学免疫学]; Q939.91 [免疫学];
学科分类号
100102 ;
摘要
The marginal zone (MZ) is largely composed of a unique subpopulation of B cells, the so-called MZ-B cells. At a molecular level, memory B cells are characterized by the presence of somatically mutated IGV genes. The earliest studies in the rat have documented the presence of hapten-specific MZ-B cells after immunization in the MZ. This work later received experimental support demonstrating that the IGHV-C mu transcripts expressed by phenotypically defined splenic MZ-B cells (defined as CD90(neg)IgM(high)IgD(low) B cells) can carry somatic hypermutation. However, only a minor fraction (< 10%-20%) of these MZ-B cells is mutated and is considered to represent memory B cells. Memory B cells can either be class-switched (IgG, IgA, IgE), or non-class-switched (IgM) B cells. B cells in the MZ are a heterogeneous population of cells and both naive MZ-B cells; class switched and unswitched memory MZ-B cells are present at this unique site in the spleen. Naive MZ-B cells carry unmutated Ig genes, produce low-affinity IgM molecules and constitute a first line of defense against invading pathogens. Memory MZ-B cells express high-affinity Ig molecules, directed to (microbial) antigens that have been encountered. In this review, we report on the memory compartment of splenic MZ-B cells in the rat to provide insights into the origin and function of these memory MZ-B cells.
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页码:145 / 158
页数:14
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