Effect of doubly layered Ru intermediate layers in perpendicular magnetic recording tape media

被引:0
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作者
Sakai, Hidetada [1 ]
Saemma, Gaku [1 ]
Nakagawa, Shigeki [1 ]
机构
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
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D O I
10.1063/1.4863385
中图分类号
O59 [应用物理学];
学科分类号
摘要
Si/NiFe bilayer structures are very effective to obtain c-axis orientation in both a Ru intermediate layer and a CoPtCr-SiO2 recording layer when they successively deposited on the Si/NiFe bilayer. Doubly layered Ru which consists of two Ru layers prepared at low and high sputtering gas pressures promoted c-axis orientation and well-isolated grains of the CoPtCr even when the Ru intermediate layer was very thin. Doubly layered Ru intermediate layers deposited on Si/NiFe seed layers attained suitable c-axis orientation and well-isolated grains of the CoPtCr recording layer, even though the Ru double-layer was as thin as 5 nm. (C) 2014 AIP Publishing LLC.
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页数:3
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