Organic-Inorganic Hybrid Materials for Flexible Thin-Film Transistors

被引：0
|
作者：
Naito, Hiroyoshi [1 ,2 ]
Nagase, Takashi [1 ,2 ]
Yoshikawa, Masashi [1 ]
Kobayashi, Takashi [1 ,2 ]
Michiwaki, Yoshiki [3 ]
Matsukawa, Kimihiro [4 ]
机构：
[1] Osaka Prefecture Univ, Dept Phys & Elect, Sakai, Osaka 5998531, Japan
[2] Osaka Prefecture Univ, Res Inst Mol Elect Devises, Sakai, Osaka 5998531, Japan
[3] Fuso Chem CO LTD, Kyoto Res Ctr, Kyoto 6200853, Japan
[4] Osaka Municipal Tech Res Inst, Dept Elect, Mat, Osaka 5368553, Japan
来源：
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2010年
关键词：
FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; PENTACENE; BEHAVIOR; HYSTERESIS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A hybrid gate insulator of poly(methyl silsesquioxane) (PMSQ) exhibits excellent insulating properties, low curing temperature of 150 degrees C and low surface energy. Hybrid semiconductors, silica nanoparticles (SNPs) added organic semiconductors exhibit drastic improvement of their wettability on insulator surfaces with low surface energy and of their crystallinity. Excellent electrical characteristics of thin-film flexible field-effect transistors fabricated using the hybrid materials has been demonstrated.
引用
收藏
页码：1693 / 1696
页数：4
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