An improved physics-based formulation of the microwave p-i-n diode impedance

被引：12
|
作者：
Gatard, Emmanuel [1 ]
Sommet, Raphael [1 ]
Bouysse, Philippe [1 ]
Quere, Raymond [1 ]
机构：
[1] XLIM, CNRS, Res Lab, Dept High Frequency Components Circuits Signals &, F-19100 Brive La Gaillarde, France
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2007年 / 17卷 / 03期
关键词：
bias-dependent impedance; carrier lifetime; forward bias; p-i-n diode; recombinations;
D O I：
10.1109/LMWC.2006.890483
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved formulation of the frequency-dependent impedance for p-i-n diodes from physical and geometrical parameters is presented. This work is addressed to diode designers and allows them to evaluate quickly and accurately the diode impedance. It comes in parallel with existing SPICE p-i-n diode model [1] used in CAD software. Under forward bias conditions, important recombinations occur in the heavily doped end regions of thin p-i-n diodes that seriously affects the diode impedance. This effect is taken into account to increase the accuracy of existing numerical models and to extend their validity domain to any I-region thicknesses. This improvement has been validated by measurement results on a 5-mu m I-region width silicon p-i-n diode.
引用
收藏
页码：211 / 213
页数：3
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