Phase noise in a differential CMOS voltage-controlled oscillator for RF applications

被引：20

作者：

Herzel, F

Pierschel, M

Weger, P

Tiebout, M

机构：

[1] Inst Semicond Phys, D-15230 Frankfurt, Germany

[2] Siemens AG, Corp Technol, Munich, Germany

[3] INFINEON, Corp Res & Dev, Munich, Germany

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING | 2000年 / 47卷 / 01期

关键词：

CMOS oscillator; oscillator; phase noise;

D O I：

10.1109/82.818888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents theoretical and experimental results on phase noise of differential CMOS oscillators. A simple analytical expression is derived and verified by simulation which relates the phase noise including the device excess noise factor to circuit parameters. In agreement with the theoretical results, an experimental 1.9-GHz oscillator yielded phase noise as Low as -100 dBc/Hz at 100-kHz offset at a power consumption of 12 mW. A wide tuning range of 250 MHz was obtained by using PMOSFET's as varicap with only slight degradation of the phase-noise performance due to the varicap.

引用

页码：11 / 15

页数：5

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