Term energies of the ground and 26 lowest excited levels arising from the 3S(2)3p(,)(2) 3s3p(3) and 3S(2)3p3d configurations in silicon-like ions with nuclear charges Z = 24-30 are evaluated to high accuracy in relativistic multireference many-body perturbation theory calculations. Theory deviates from experiment on the order of 0.01% for the majority, and by less than 0.2% for all but 13, of the experimentally identified energy levels. Anomalous theory-experiment deviations along the isoelectronic sequence for six excited levels clearly indicate that they have been misidentified, among them the solar lines at 237.61 Angstrom and 259.963 Angstrom. New identifications for the misidentified levels are given based on theoretical wavelengths and lifetimes. Hitherto unidentified 3s(2)3p3d (3)Fdegrees(2,3,4) decay lines along the isoelectronic sequence are predicted to well within 0.1 Angstrom accuracy. Calculated lifetimes of the odd-parity 3s(2)3p3d (3)Fdegrees(3) state in silicon-like ions agree reasonably well with experiment, Co13+ being the exception.
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Fudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Lund Univ, Dept Phys, Div Math Phys, Box 118, SE-22100 Lund, SwedenFudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Si, R.
Li, S.
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Inst Appl Phys & Computat Math, Beijing 100088, Peoples R ChinaFudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Li, S.
Guo, X. L.
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Second Mil Med Univ, Shanghai Changhai Hosp, Dept Radiotherapy, Shanghai 200433, Peoples R ChinaFudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Guo, X. L.
Chen, Z. B.
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Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R ChinaFudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Chen, Z. B.
Brage, T.
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Lund Univ, Dept Phys, Div Math Phys, Box 118, SE-22100 Lund, SwedenFudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Brage, T.
Jonsson, P.
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Malmo Univ, Grp Mat Sci & Appl Math, SE-20506 Malmo, SwedenFudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Jonsson, P.
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Wang, K.
Yan, J.
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Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China
Peking Univ, Ctr Appl Phys & Technol, Beijing 100871, Peoples R China
Shanghai Jiao Tong Univ, CICIFSA, Shanghai 200240, Peoples R ChinaFudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Yan, J.
Chen, C. Y.
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Fudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R ChinaFudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Chen, C. Y.
Zou, Y. M.
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Fudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R ChinaFudan Univ, Dept Nucl Sci & Technol, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
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Fudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Nucl Phys & Ion Beam Applicat MOE, Shanghai 200433, Peoples R ChinaFudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Li, M. C.
Guo, X. L.
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Fudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Nucl Phys & Ion Beam Applicat MOE, Shanghai 200433, Peoples R China
Second Mil Med Univ, Shanghai Changhai Hosp, Dept Radiotherapy, Shanghai 200433, Peoples R ChinaFudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Guo, X. L.
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Wang, K.
Si, R.
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Fudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Nucl Phys & Ion Beam Applicat MOE, Shanghai 200433, Peoples R ChinaFudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Si, R.
Zhang, C. Y.
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Fudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Nucl Phys & Ion Beam Applicat MOE, Shanghai 200433, Peoples R ChinaFudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Zhang, C. Y.
Chen, C. Y.
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Fudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Nucl Phys & Ion Beam Applicat MOE, Shanghai 200433, Peoples R ChinaFudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Chen, C. Y.
Zou, Y. M.
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Fudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China
Fudan Univ, Key Lab Nucl Phys & Ion Beam Applicat MOE, Shanghai 200433, Peoples R ChinaFudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China