Evaluation of bondability and reliability of single crystal copper wire bonding

被引:0
|
作者
Chen, Hua [1 ]
Lee, S. W. Ricky [1 ]
Ding, Yutian [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Ctr Adv Microsyst Packaging, Elect Packaging Lab, Kowloon, Hong Kong, Peoples R China
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Copper-based interconnect is an emerging trend in microelectronics packaging. Some studies have shown that copper wires may serve as a viable, cost-effective alternative to gold in some high-end, ball and wedge bonding applications. This study is intended to evaluate the bondability and reliability of single crystal copper wire bonding. After annealing, the copper wires are bonded on gold (1 similar to 2 micron thick) and aluminum (2 micron thick) surfaces without gas protection. The bondability of single crystal copper wire is evaluated and compared with gold and aluminum wires. The intermetallic compounds (IMCs) between copper and gold and between copper and aluminum are identified on the fractured surfaces by EDAX. After thermal aging, wire pull and ball shear tests are performed and the test results are compared with those without thermal aging. From the present study, it is found that single crystal copper wires can be bonded on the gold pad and the aluminum pad by thermosonic ball bonding and wedge bonding without gas protection. Cu3Au and AuCu IMCs are found at the copper/gold interface while CuAl2 is found at the copper/aluminum interface. After thermal aging, Kirkendall voids are discovered at the Cu/Au interface.
引用
收藏
页码:238 / 244
页数:7
相关论文
共 50 条
  • [1] Enhancing bondability with coated copper bonding wire
    Uno, Tomohiro
    MICROELECTRONICS RELIABILITY, 2011, 51 (01) : 88 - 96
  • [2] Novel Coated Silver (Ag) Bonding Wire: Bondability and Reliability
    Kumar, Balasubramanian Senthil
    Murali, Sarangapani
    Tae, Kang Il
    Evonne, Lim Yee Weon
    Wei, Tok Chee
    James, Kim Tae Yeop
    Eric, Tan Swee Seng
    Xi, Zhang
    2017 IEEE 19TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2017,
  • [3] Wire bonding - what is bondability?
    Berchtold, L.
    Galvanotechnik, 1998, 89 (08): : 2738 - 2744
  • [4] Wire Bonding of Cu and Pd Coated Cu Wire: Bondability, Reliability, and IMC Formation
    Qin, Ivy
    Xu, Hui
    Clauberg, Horst
    Cathcart, Ray
    Acoff, Viola L.
    Chylak, Bob
    Huynh, Cuong
    2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 1489 - 1495
  • [5] A concept to relate wire bonding parameters to bondability and ball bond reliability
    Liang, ZN
    Kuper, FG
    Chen, MS
    MICROELECTRONICS AND RELIABILITY, 1998, 38 (6-8): : 1287 - 1291
  • [6] Concept to relate wire bonding parameters to bondability and ball bond reliability
    Liang, Z.N.
    Kuper, F.G.
    Chen, M.S.
    Microelectronics Reliability, 1998, 38 (6-8): : 1287 - 1291
  • [8] Bondability, reliability and yield benchmarks for high volume specialty gold fine bonding wire
    Lichtenberger, H
    Zasowski, M
    Lovitz, G
    Ha, D
    2003 INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS, 2003, 5288 : 292 - 297
  • [9] Effects of annealing and drawing on properties of single crystal copper bonding wire
    Ding, Yutian
    Cao, Jun
    Hu, Yong
    Kou, Shengzhong
    Xu, Guangji
    Jixie Gongcheng Xuebao/Journal of Mechanical Engineering, 2009, 45 (04): : 83 - 88
  • [10] Bondability window and power input for wire bonding
    Han, L
    Wang, FL
    Xu, WH
    Zhong, J
    MICROELECTRONICS RELIABILITY, 2006, 46 (2-4) : 610 - 615