Interdigitated Back-Contacted Silicon Heterojunction Solar Cells using Semi-Industrial Processing Equipment

被引：0
|
作者：
Bronsveld, Paula [1 ]
Stodolny, Maciej [1 ]
Duval, Leo [1 ]
Manshanden, Petra [1 ]
Geerligs, Bart [1 ]
机构：
[1] Energy Res Ctr Netherlands ECN, NL-1755 ZG Petten, Netherlands
来源：
2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2015年
关键词：
amorphous silicon; crystalline silicon; heterojunction; interdigitated back-contacted solar cells;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Interdigitated back-contacted a-Si:H/c-Si heterojunction solar cells were made using two different approaches for patterning the a-Si:H layers: screen-printing in combination with wet chemical etching and in-situ mechanical masking. Processing was restricted to semi-industrial, low cost processing equipment on 6" wafers, cut back after processing into nine smaller cells by laser. After active layer patterning, implied V-OC values of over 700 mV were measured for both approaches and the best J(SC) and V-OC values on cell level were 39.7 mA/cm(2) and 697 mV, respectively. Efficiencies over 21% are expected, when some metallization issues at the rear are solved.
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页数：4
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