Measuring the bulk resistivity of CdZnTe single crystal detectors using a contactless alternating electric field method

被引：10
|
作者：
DeAntonis, P
Morton, EJ
Menezes, T
机构：
[1] Department of Physics, University of Surrey, Guildford
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 380卷 / 1-2期
关键词：
D O I：
10.1016/S0168-9002(96)00335-X
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
It is of some importance to know the bulk resistivity of semiconductor materials. Conventionally, measurements of bulk resistivity require the use of electrical contact directly to the sample itself. This raises questions related to the type of contact so formed. To address this issue, a contactless method of measurement has been devised, based on the dielectric heating produced by inducing an alternating current in the dielectric of a capacitor. This effect has been demonstrated to be both feasible and accurate, resulting in the measurement of a bulk resistivity of 4.5 x 10(10) Omega cm for small samples of CdZnTe.
引用
收藏
页码：157 / 159
页数：3
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