Development and applications of electron beam ion source for nanoprocesses

被引：4

作者：

Sakurai, M. ^{[1
]}

Tona, M. ^{[2
]}

Watanabe, H. ^{[3
]}

Nakamura, Nobuyuki ^{[3
]}

Ohtani, Shunsuke ^{[3
]}

Terui, T. ^{[4
]}

Mashiko, S. ^{[4
]}

Sakaue, H. A. ^{[5
]}

机构：

[1] Kobe Univ, Dept Phys, Kobe, Hyogo 6578501, Japan

[2] Kobe Univ, Dept Chem, Kobe, Hyogo 6578501, Japan

[3] Univ Electrocommun, Inst Laser Sci, Chofu, Tokyo 1828585, Japan

[4] Natl Inst Informat & Commun Technol, Kobe, Hyogo 6512492, Japan

[5] Natl Inst Fus Sci, Toki, Gifu 5095292, Japan

来源：

14TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF HIGHLY CHARGED IONS (HCI 2008) | 2009年 / 163卷

关键词：

HIGHLY-CHARGED IONS;

D O I：

10.1088/1742-6596/163/1/012115

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An electron beam ion source (EBIS) was developed and applied to create nanostructures. The EBIS uses a commercial superconducting magnet (3T) with vacuum system independent from another vacuum system which comprises all of the ion source constituents except the magnet. The attained parameters of electron beam are emission current of 180mA and acceleration voltage of 20kV. The EBIS creates HCIs in nA region (e.g. 2nA for Ar12+). Higher charge states are suppressed by residual gases. The HCIs were irradiated to HOPG and the structure of irradiated surface was observed by STM, and the image indicates the fluence as much as 10(13)ion/cm(2) is accessible with the present EBIS.

引用

页数：4

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