Chemical-Mechanical Polishing of CdTe and Zn x Cd1-x Te Single Crystals by H2O2(HNO3)-HBr-Organic Solvent Etchant Compositions

被引:3
|
作者
Tomashik, Z. F. [1 ]
Tomashik, V. M. [1 ]
Stratiychuk, I. B. [1 ]
Okrepka, G. M. [1 ]
Hnativ, I. I. [1 ]
Moravec, P. [2 ]
Hoschl, P. [2 ]
Bok, J. [2 ]
机构
[1] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Charles Univ Prague, Fac Math & Phys, Inst Phys, CZ-12116 Prague 2, Czech Republic
关键词
CdTe; ZnxCd1-xTe; chemical-mechanical polishing; chemical etching;
D O I
10.1007/s11664-009-0692-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Chemical-mechanical polishing of CdTe and Zn (x) Cd1-x Te single-crystal surfaces by bromine-evolving compositions based on aqueous solutions of H2O2(HNO3)-HBr-solvent has been investigated. The dependences of the chemical-mechanical polishing rate on the dilution of the base polishing etchant for various organic components have been determined. The surface condition after such polishing has been investigated using profilometry. The polishing etchant compositions for CdTe and Zn (x) Cd1-x Te single-crystal surfaces and the chemical polishing conditions have been optimized.
引用
收藏
页码:1637 / 1644
页数:8
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