Giant strain responses and relaxor characteristics in lead-free (Bi0.5Na0.5)TiO3-BaZrO3 ferroelectric thin films

被引:13
|
作者
Wang, Zhe [1 ,2 ]
Zhao, Jinyan [1 ,2 ]
Niu, Gang [1 ,2 ]
Ren, Wei [1 ,2 ]
Zhang, Nan [1 ,2 ]
Zheng, Kun [1 ,2 ]
Quan, Yi [1 ,2 ]
Wang, Lingyan [1 ,2 ]
Zhuang, Jian [1 ,2 ]
Cai, Henghui [3 ]
Li, Xin [3 ]
Wang, Genshui [3 ]
Liu, Ming [1 ,2 ]
Jiang, Zhuangde [4 ,5 ]
Zhao, Yulong [6 ]
机构
[1] Xi An Jiao Tong Univ, Key Lab, Elect Mat Res Lab, Sch Elect Sci & Engn, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Int Ctr Dielect Res, Xian 710049, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
[4] Xi An Jiao Tong Univ, State Key Lab Mfg Syst Engn, Xian 710049, Peoples R China
[5] Xi An Jiao Tong Univ, Int Joint Lab Micro Nano Mfg & Measurement Techno, Xian 710049, Peoples R China
[6] Xi An Jiao Tong Univ, State Key Lab Mech Mfg Syst, Xian 710049, Peoples R China
基金
中国博士后科学基金; 国家重点研发计划;
关键词
ELECTRICAL-PROPERTIES; PIEZOELECTRIC PROPERTIES; DEPENDENT PROPERTIES; TEMPERATURE; BEHAVIOR; POLARIZATION; FABRICATION; THICKNESS;
D O I
10.1039/d1tc05197k
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lead-free bismuth sodium titanite, (Bi0.5Na0.5)TiO3 (BNT)-based piezoelectric thin films have enormous potential in applications such as micro-actuators and micro-ultrasonic transducers due to their large strain responses. In this paper, (1 - x)(Bi0.5Na0.5)TiO3-xBaZrO(3) (x = 0.02, 0.04, 0.06 and 0.07, BNT-100xBZ) piezoelectric thin films were deposited on Pt/TiO2/SiO2/Si (001) substrates by sol-gel method. All BNT-100xBZ thin films showed good macro-morphology and crystallinity. In addition, no clear phase structure transition was observed by increasing the BZ contents in the BNT-100xBZ solution, which, however, leads to evident variations in the dielectric and piezoelectric properties of the BNT-100xBZ thin films. A giant macro-scale strain value of 1.31% was obtained in the BNT-4BZ thin films, accompanied by a relatively lower dielectric loss of 0.03 for all BNT-100xBZ thin films. According to temperature- and frequency-dependent dielectric properties, it is found that the BNT-4BZ composition has a coexistence of ferroelectric phase and relaxor characteristics, which is different from other compositions. Furthermore, the intensity of the current peak related to the domain switching in the BNT-4BZ thin films is higher than that of other compositions. This work is of great interest for further enhancement of the strain response and reduction of the dielectric loss in BNT-based lead-free thin films for various piezoelectric device applications like micro-actuator systems.
引用
收藏
页码:7449 / 7459
页数:12
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