Investigations on Bond Strength Development of Plasma Activated Direct Wafer Bonding with Annealing

被引：8
|
作者：
Plach, T. [1 ,2 ]
Hingerl, K. [2 ]
Stifter, D. [1 ,2 ]
Dragoi, V. [3 ]
Wimplinger, M. [3 ]
机构：
[1] Johannes Kepler Univ Linz, Christian Doppler Lab Microscop & Spect Mat Chara, Altenberger Str 69, A-4040 Linz, Austria
[2] Johannes Kepler Univ Linz, Ctr Surface & Nanoanalyt, A-4040 Linz, Austria
[3] E Thallner GmbH, EV Grp, Florian, Austria
来源：
SEMICONDUCTOR WAFER BONDING 12: SCIENCE, TECHNOLOGY, AND APPLICATIONS | 2012年 / 50卷 / 07期
关键词：
MODEL; SIO2;
D O I：
10.1149/05007.0277ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In order to clarify the mechanism behind the bond strength enhancement at low temperatures by plasma activation the bond strength development with annealing temperature was systematically investigated. The study consisted of bonding experiments on the material system Si-SiO2 under varying process conditions. Combining experimental findings with established models we developed a better understanding of the bonding process which helps explaining the experimentally found behavior. Based on this improved understanding we can predict that plasma activated (PA) wafer bonding can be successfully employed for a larger group of materials than it is currently used.
引用
收藏
页码：277 / 285
页数：9
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