Depth profile analysis on the nanometer scale by a combination of electron probe Microanalysis (EPMA) and focused ion beam specimen preparation (FIB)

Electron probe microanalysis (EPMA) offers high sensitivity and high accuracy in quantitative measurements of chemical compositions and mass coverages. Owing to the low detection limits of the wavelength-dispersive technique, monolayers with mass coverages of about 0.05 mug cm(-2) can be detected. Assuming a density of 5 g cm(-3) this corresponds to a thickness of 0.1 nm. With these advantages in mind, EPMA was extended to depth profile analysis in the sub-micron range using a surface removal technique. The present paper shows how depth profile analysis can be improved by combining EPMA and the focused ion beam (FIB) technique. The focused ion beam system uses a Ga+ ion beam. The ion beam allows the milling of defined geometries on the nanometer scale, so that very shallow bevels with exactly defined angles in relation to the surface can be obtained. Low surface damage is expected due to low sputtering effects. Calibrated WDX measurements along the bevel deliver quantitative concentration depth profiles. First results obtained with this new combination of methods will be presented for a multilayered sample used in optical data storage.