TCAD Calibration for Cu2ZnSnS4 Solar Cell Simulation

被引：0
|
作者：
Mopurisetty, Sundara Murthy [1 ]
Bajaj, Mohit [2 ]
Ganguly, Swaroop [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
[2] Globalfoundries Engn Private Ltd, Bangalore 500045, Karnataka, India
来源：
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年
关键词：
Optical constants; Transfer matrix method; Absorber layer; CZTS; CDS THIN-FILMS; OPTICAL-PROPERTIES; AL;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We present a TCAD simulation deck for Cu2ZnSnS4 (CZTS) solar cells that is calibrated to data from the best reported experimental device structure: the wherewithal for future predictive device modeling. The calibration is performed by matching the experimental external quantum efficiency (EQE) and current density vs. voltage (J-V) characteristics with those obtained from combined optical and electrical simulations. We find that using theoretically calculated extinction coefficient (k) values in the simulation leads to large discrepancy with experiment; on the other hand, experimentally measured k-values for bulk CZTS need only modest modification (at near-bandgap) in order to be able to fit the EQE data for the device-structured CZTS that we have here.
引用
收藏
页码：2228 / 2231
页数：4
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