Electron capture processes in quantum dots due to one-and two-phonon assisted transitions: The role of optical phonon confinement

被引：0
|
作者：
Vartanian, A. L. [1 ]
Vardanyan, K. A. [1 ]
Mughnetsyan, V. N. [1 ]
Kirakosyan, A. A. [1 ]
机构：
[1] Yerevan State Univ, Dept Solid State Phys, Yerevan 0025, Armenia
来源：
19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19) | 2015年 / 647卷
关键词：
D O I：
10.1088/1742-6596/647/1/012017
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Electron capture induced by carrier heating in spherical quantum dot quantum well (QD-QW) structure is studied theoretically. The capture rate (CR) in one- and two-polar-optical-phonon-mediated capture processes has been studied by taking into account the phonon confinement. We have derived the analytic expressions for carrier CRs which can be conveniently applied to practical calculations for the spherical quantum dot systems. The numerical results of the CR as function of dot radius, lattice temperature and electron density in GaAs/AlAs/vacuum and CdSe/ZnS/H2O QD systems are obtained and discussed.
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