Effect of Aluminum Doping on Performance of HfOx-Based Flexible Resistive Memory Devices

The Al-doped HfOx-based resistive memory devices have been fabricated on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) flexible substrate at room temperature. X-ray photoelectron spectroscopy is used to extract the different doping percentage of Al which allows optimizing the switching performance. It improves the cycle-to-cycle and cell-to-cell uniformity of switching parameters by tuning the oxygen vacancies in HfOx layers. The 7.5% Al-doped HfOx-based flexible resistive memory device shows excellent switching characteristics such as resistance ratio (>10(3)) and retention (similar to 104 s). There is no degradation of memory window under the mechanical strain with bending radius ranging from 25 to 5 mm. The temperature-dependent resistive switching characteristics have also been studied. There is sufficient memory window (>10(2)) till similar to 10(4) s at elevated temperature. The I-V curve fitting shows the ohmic (hopping) conduction in low resistance state (LRS) and the trap-controlled space charge limited conduction (SCLC) in high resistance state (HRS), supported by Arrhenius plot.