100-nm IGZO Thin-Film Transistors With Film Profile Engineering

被引：12
|
作者：
Lin, Horng-Chih [1 ,2 ,3 ]
Shie, Bo-Shiuan [1 ,2 ]
Huang, Tiao-Yuan [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Natl Nano Device Labs, Hsinchu 300, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 06期
基金：
美国国家科学基金会;
关键词：
Film profile engineering (FPE); indium-gallium-zinc-oxide (IGZO); metal oxide; photoresist (PR) trimming; thin-film transistors (TFTs); TFTS;
D O I：
10.1109/TED.2014.2318703
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
100-nm indium-gallium-zinc-oxide (IGZO) thin-film transistors were fabricated with a one-mask process, which takes the advantage of photoresist trimming technique and the concept of film profile engineering (FPE). With I-line-based photolithography, a device with channel length of 97 nm has been successfully fabricated. The FPE device contains a conformal Al2O3 gate oxide, concave IGZO channel, and discrete source/drain (S/D) Al contacts. Good device characteristics including a high-ON/OFF current ratio (>10(7)) and good subthreshold swing (140 mV/decade) are obtained. Nonetheless, high-S/D series resistance presents a key issue that needs to be addressed for further device performance improvement.
引用
收藏
页码：2224 / 2227
页数：4
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