Electron dephasing in wurtzite indium nitride thin films

The authors present magnetotransport measurements of electron dephasing characteristics in wurtzite indium nitride thin films grown by metal-organic vapor phase epitaxy. Pronounced weak antilocalization effects have been observed at low magnetic fields due to the presence of strong spin-orbit interactions at the top of the valence band. With the aid of the weak localization theory, they are able to demonstrate that the dephasing is connected to three separate processes of the spin-orbit, electron-phonon, and extended structural defect scatterings. The spin-orbit splitting has been determined to be 5.7 meV. They have also shown that both the magnetoresistivity and resistivity can be explained using the same temperature-dependent dephasing times. (c) 2006 American Institute of Physics.