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- [2] THE ENERGY-LEVELS OF ZN AND SE IN (ALXGA1-X)0.52IN0.48P [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (03): : L187 - L189
- [3] Far-infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)0.52In0.48P [J]. PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 : 283 - 288
- [8] Real-time ellipsometric measurement during Growth of (AlXGa1-X)0.52In0.48P thin films [J]. 1996, JJAP, Minato-ku, Japan (35):
- [9] Impact ionisation coefficients in (AlxGa1-x)(0.52)In0.48P [J]. COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 569 - 574