Interplay of localization and anisotropy in the optical properties of ordered (AlxGa1-x)0.52In0.48P

被引:1
|
作者
Dörr, U
Lutz, R
Schuler, J
Kalt, H
Send, W
Gerthsen, D
机构
[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany
[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
关键词
ordered semiconductor; anisotropy; localization;
D O I
10.1016/S0022-2313(99)00373-7
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Using polarized spatially integrated photoluminescence (PL) and polarized micro-photolumincscence (mu-PL) experiments we have investigated the optical properties of ordered (Al-0.5 Ga-0.5)(0.52)In-0.48 P. The anisotropy of the PL cannot be completely understood in terms of the reduced symmetry of the CuPtB-structure. Exciton localization which arises from the inhomogeneous microstructure of ordered crystals is shown to affect the polarization of the PL significantly. Increasing the temperature from 5 to 50-100 K leads to a thermally activated occupation of deeply localized states. The polarization of the PL from these states stands in contradiction to the anisotropy which arises from the CuPtB-structure. We demonstrate this by PL measurements of the [0 0 1]-emission and by mu-PL measurements on the (1 1 0) cleaved edge. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:718 / 720
页数:3
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