Study of Multilayer Thin Film Structures by Rutherford Backscattering Spectrometry

被引：0
|
作者：
Bachurin, V. I. [1 ]
Melesov, N. S. [1 ]
Parshin, E. O. [1 ]
Rudy, A. S. [1 ]
Churilov, A. B. [1 ]
机构：
[1] Russian Acad Sci, KA Valiev Inst Phys & Technol, Yaroslavl Branch, Yaroslavl 150007, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 06期
关键词：
multilayer thin-film structures; depth profiling; Rutherford backscattering spectrometry;
D O I：
10.1134/S1063785019060191
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have evaluated possibilities of using the method of Rutherford backscattering spectrometry (RBS) for depth profiling of multilayer thin-film structures containing nanodmensional layers of elements with close atomic masses. It is established that RBS measurements can ensure high precision determination of the composition of these multilayer structures, total film thickness, and thicknesses of separate layers. This ability can be used for the input quality control of multilayer structures used in micro- and nanotechnologies.
引用
收藏
页码：609 / 612
页数：4
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