Synthesis and properties of indium-doped hematite

被引：27

作者：

Krehula, Stjepko ^{[1
]}

Ristic, Mira ^{[1
]}

Reissner, Michael ^{[2
]}

Kubuki, Shiro ^{[3
]}

Music, Svetozar ^{[1
]}

机构：

[1] Rudjer Boskovic Inst, Div Mat Chem, POB 180, HR-10002 Zagreb, Croatia

[2] TU Wien, Inst Solid State Phys, A-1040 Vienna, Austria

[3] Tokyo Metropolitan Univ, Grad Sch Sci & Engn, Dept Chem, Minami Osawa 1-1, Hachioji, Tokyo 1920397, Japan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 695卷

关键词：

Hematite; Indium; Mossbauer spectroscopy; Morin transition; X-ray diffraction; FE-SEM; MAGNETIC-PROPERTIES; MORIN TRANSITION; MOSSBAUER-SPECTROSCOPY; NEUTRON-DIFFRACTION; PARTICLE-SIZE; STRUCTURAL-CHARACTERIZATION; MICROSTRUCTURAL PROPERTIES; SUBSTITUTED HEMATITES; WEAK FERROMAGNETISM; CRYSTAL-STRUCTURE;

D O I：

10.1016/j.jallcom.2016.11.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium-doped hematite samples were prepared by calcination of indium-doped goethite samples and investigated using different instrumental techniques. In3+-for-Fe3+ substitution in the hematite structure was confirmed by the determination of the unit cell expansion using X-ray powder diffraction and by the measurement of the hyperfine magnetic field reduction using Mossbauer spectroscopy. Indium substitution in hematite also caused a decrease in the crystallite size, an increase in the particle size, a shift in the position of bands in infrared spectra, a decrease in the relative intensity of absorption bands in UV-Vis-NIR spectra and a disappearance of the Morin transition. Maximum substitution was estimated at about 8 mol%. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：1900 / 1907

页数：8

共 50 条

[1] Synthesis and properties of indium-doped hematite
Krehula, Stjepko
Ristić, Mira
Reissner, Michael
Kubuki, Shiro
Musić, Svetozar
[J]. Journal of Alloys and Compounds, 2017, 695 : 1900 - 1907
[2] Highly enhanced gas-sensing properties of indium-doped mesoporous hematite nanowires
Chen, H. D.
Jin, K. L.
Wang, P. F.
Xu, J. C.
Han, Y. B.
Jin, H. X.
Jin, D. F.
Peng, X. L.
Hong, B.
Li, J.
Yang, Y. T.
Gong, J.
Ge, H. L.
Wang, X. Q.
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2018, 120 : 271 - 278
[3] Synthesis and optical properties of indium-doped zinc oxide nanobelts
Department of Physics, Harbin Normal University, Harbin 150080, China
[J]. Rengong Jingti Xuebao, 2008, 2 (376-379):
[4] OPTICAL PROPERTIES OF INDIUM-DOPED SILICON
NEWMAN, R
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 465 - 467
[5] PHOTOELECTRIC PROPERTIES OF INDIUM-DOPED SILICON
GODIK, EE
SINIS, VP
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (03): : 347 - 348
[6] Synthesis and ethanol sensing properties of indium-doped tin oxide nanowires
Xue, X. Y.
Chen, Y. J.
Liu, Y. G.
Shi, S. L.
Wang, Y. G.
Wang, T. H.
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (20)
[7] Optical properties of indium-doped ZnO films
Cao, YG
Miao, L
Tanemura, S
Tanemura, M
Kuno, Y
Hayashi, Y
Mori, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3A): : 1623 - 1628
[8] OPTOELECTRONIC PROPERTIES OF INDIUM-DOPED ZINC SELENIDE
MAKHNII, VP
MELNIK, VV
SOBISHCHANSKII, BM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (06): : 638 - 639
[9] ELECTROPHYSICAL PROPERTIES OF INDIUM-DOPED BISMUTH TELLURIDE
ZHITINSKAYA, MK
NEMOV, SA
RAVICH, YI
ABAIDULINA, TG
KOMPANEETS, VV
BUSHMARINA, GS
DRABKIN, IA
[J]. SEMICONDUCTORS, 1993, 27 (10) : 952 - 954
[10] Synthesis, characterization and properties of indium-doped manganese oxide molecular sieve sponges
Liu, Zhenxin
Wang, Xidong
Guo, Xuehui
Wu, Depeng
Xing, Yu
[J]. NEW JOURNAL OF CHEMISTRY, 2024, 48 (19) : 8818 - 8826

← 1 2 3 4 5 →