Monte Carlo simulation of single-electron nanocrystal memories

被引：3
|
作者：
Sim, JS [1 ]
Kong, J
Lee, JD
Park, BG
机构：
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[2] Seoul Natl Univ, IRSC, Seoul 151742, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 4B期
关键词：
nanocrystal memory; single-electron memory; single-electron transistor; quantum dot; Coulomb blockade; Monte Carlo method;
D O I：
10.1143/JJAP.43.2041
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a Monte Carlo simulation method for single-electron nanocrystal memories including the nanocrystal interdot effect, and show the simulation results obtained. A nanocrystal memory was modeled as a network of modified single-tunnel junctions for its program operation and as a network of channel resistances for simulating drain current to extract its threshold voltage. The results show that, in programming characteristics, device parameters have mutual trade-off relationships in the clearness of steplike single-charging features and in the magnitude of threshold voltage shifts. The presented method will be helpful for the design of single-electron nanocrystal memories.
引用
收藏
页码：2041 / 2045
页数：5
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