Influence of temperature and electronic disorder on the Raman spectra of nickel cobalt oxides

被引:42
|
作者
Windisch, CF
Exarhos, GJ
Sharma, SK
机构
[1] Pacific NW Natl Lab, Richland, WA 99352 USA
[2] Univ Hawaii, Hawaii Inst Geophys & Planetol, Honolulu, HI 96822 USA
关键词
D O I
10.1063/1.1509838
中图分类号
O59 [应用物理学];
学科分类号
摘要
Raman spectra of nickel cobalt oxide films with spinel crystal structure showed unexpected variations with film thickness. Combined with the results of studies as a function of incident laser power and temperature, from 25 to 800 K, the results strongly point to a small polaron hopping model for electrical conductivity in these materials. During laser excitation, phonons interact with valence electrons such that the carrier holes in these materials become localized or associated with the polarized environment created by the electron-phonon interaction (polaron). These interactions split the energy levels of the valence electrons contributing to band broadening well below room temperature. (C) 2002 American Institute of Physics.
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页码:5572 / 5574
页数:3
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