Electron-phonon scattering in noble metals containing dislocations

被引:4
|
作者
Sachslehner, F
机构
[1] Inst. für Festkörperphysik, Universität Wien, A-1090 Wien
关键词
D O I
10.1088/0953-8984/8/32/009
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In the limit of small deformation (true strain epsilon < 10%) it is possible to derive from curves of the deviation from Manhiessm's rule (DMR) for samples containing dislocations the anisotropy parameter of electron-phonon scattering (A(ph)) as a function of temperature. In this case the fitted A(ph)-curves for copper and silver samples based on the two-group model (TGM) are in excellent agreement with the theoretical calculation of Hasegawa and Kasuya. In contrast A(ph)-curves derived from low-field Hall effect data within the (uncorrected) TGM are not directly suitable for DMR calculations due to the different averaging of relaxation times for the conductivity and the Hall effect. For understanding DMR curves with 10% < epsilon < 100% the two-group model is insufficient. Up to about 0.2 of normalized DMR seems to result from a DMR between small- and large-angle scattering.
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页码:5891 / 5904
页数:14
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