Recent Progress of Green Laser Diodes

被引:0
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作者
Nakamura, Takao [1 ]
机构
[1] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Output powers of over 100mW and wall plug efficiencies as high as 8.9% in the wavelength range of 525-532 nm were demonstrated in InGaN based laser diodes on semipolar {20 (2) over bar1} GaN substrates.
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