Quantitative STM investigation of the phase formation in submonolayer In/Si(111) system

被引：15

作者：

Zotov, AV ^{[1
]}

Saranin, AA

Kubo, O

Harada, T

Katayama, M

Oura, K

机构：

[1] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 565, Japan

[2] Inst Automat & Control Proc, Vladivostok 690041, Russia

[3] Vladivostok State Univ Econ & Serv, Fac Elect, Vladivostok 690600, Russia

[4] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia

来源：

APPLIED SURFACE SCIENCE | 2000年 / 159卷

基金：

日本学术振兴会;

关键词：

atom-solid interactions; silicon; indium; surface structure; morphology; roughness; topography; low energy electron diffraction (LEED); scanning tunnelling microscopy (STM);

D O I：

10.1016/S0169-4332(00)00156-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using scanning tunneling microscopy, the formation of the submonolayer In/Si(lll) interface has been studied. The main objective of this work is the determination of the composition of the forming surface phases, Si(111)root 31 x root 31-In and Si(111)4 x I-In. As a result, the absolute In coverages and the top Si atom densities have been extracted from the measured fractions of the surface area occupied by various structural domains and quantitative analysis of Si mass transport. It has been found that the surface unit cell of the 4 x I-In reconstruction contains three In atoms and two Si atoms, while the unit cell of the root 31 x root 31 -In is built of 16-17 in atoms and 26-28 Si atoms. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：237 / 242

页数：6

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