Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

被引：11
|
作者：
Benaissa, M.
Vennegues, P.
Tottereau, O.
Nguyen, L.
Semond, F.
机构：
[1] CNRST, Rabat 10102, Morocco
[2] CNRS, CRHEA, F-06560 Valbonne, France
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 23期
关键词：
D O I：
10.1063/1.2399940
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots. (c) 2006 American Institute of Physics.
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