Polarization dependence of phonon and electronic Raman intensities in PrVO4 and NdVO4

被引:19
|
作者
Nguyen, AD
Murdoch, K
Edelstein, N
Boatner, LA
Abraham, MM
机构
[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
[2] OAK RIDGE NATL LAB, DIV SOLID STATE, OAK RIDGE, TN 37831 USA
关键词
D O I
10.1103/PhysRevB.56.7974
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The polarization behavior of the phonon and electronic Raman intensifies in PrVO4 and NdVO4 has been measured. These experimental intensities are compared with the intensities predicted by a polarization dependent intensity theory. Good agreement was found between theory and experiment. The fitted values of the ratio F-1/F-2 for PrVO4 and NdVO4 were found to be 1.0 and 0.48, respectively. The relative values of the alpha(q)(t) parameters obtained from the fit were compared with theoretical values which were derived using both second-and third-order theory, where the latter included the spin-orbit interaction. Axe's second-order theory was found to adequately explain the relative intensities of electronic Raman transitions in PrVO4 and NdVO4.
引用
收藏
页码:7974 / 7987
页数:14
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