Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (311)B substrates

被引：7

作者：

Sritirawisarn, N. ^{[1
]}

van Otten, F. W. M. ^{[1
]}

Rodriguez, P. E. D. Soto ^{[1
]}

Wera, J. L. E. ^{[1
]}

Notzel, R. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, COBRA Res Inst Commun Technol, NL-5600 MB Eindhoven, Netherlands

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 02期

关键词：

Low-dimensional structures; Chemical-beam epitaxy; Nanomaterials; GROWTH; ISLANDS;

D O I：

10.1016/j.jcrysgro.2009.10.017

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The authors report the formation of two-dimensional InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (3 1 1)B substrates by chemical-beam epitaxy (CBE). The SL template and InAs QD growth conditions are studied in detail for optimized QD ordering. Excellent photoluminescence emission up to room temperature is achieved from buried QD arrays. The emission wavelength is tuned from above 1.9 mu m to the 1.55 mu m telecom wavelength region through the insertion of ultrathin GaAs interlayers beneath the QD arrays. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：164 / 168

页数：5

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