Characterization of CMOS pixel detectors for digital X-ray imaging

被引：7

作者：

Cho, Min Kook

Kim, Ho Kyung ^{[1
]}

Graeve, Thorsten

Kim, Jung-Min

机构：

[1] Pusan Natl Univ, Sch Mech Engn, Pusan 609735, South Korea

[2] Radicon Imaging Corp, Santa Clara, CA 95054 USA

[3] Korea Univ, Coll Hlth Sci, Seoul 136703, South Korea

来源：

ADVANCED NONDESTRUCTUVE EVALUATION I, PTS 1 AND 2, PROCEEDINGS | 2006年 / 321-323卷

关键词：

X-ray imaging; digital radiography; computed tomography; MTF; NPS; DQE;

D O I：

10.4028/www.scientific.net/KEM.321-323.1052

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In order to develop a cost-effective digital X-ray imaging system, we considered a CMOS (complementary metal-oxide-semiconductor) photodiode array in conjunction with a scintillation screen. Imaging performance was evaluated in terms of MTF (modulation-transfer function), NPS (noise-power spectrum) and DQE (detective quantum efficiency). The presampled MTF was measured using a slanted-slit method. The NPS was determined by 2-dimensional Fourier analysis. Both the measured MTF and NPS, and a self-developed computational model for the X-ray spectral analysis were used to determine the spatial frequency-dependent DQE. From the measured MTF, the spatial resolution was found to be about 10.5 line pairs per millimeter (lp/mm). For a 45-kVp tungsten spectrum, the measured DQE around zero spatial frequency was about 40%.

引用

页码：1052 / 1055

页数：4

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