Enormously high-peak-power optical pulse generation from a single-transverse-mode GaInN blue-violet laser diode

被引：19

作者：

Kuramoto, Masaru ^{[1
,2
]}

Oki, Tomoyuki ^{[1
,2
]}

Sugahara, Tomoya ^{[1
]}

Kono, Shunsuke ^{[2
]}

Ikeda, Masao ^{[1
,2
]}

Yokoyama, Hiroyuki ^{[2
]}

机构：

[1] Sony Corp, Adv Mat Labs, Atsugi, Kanagawa 2430014, Japan

[2] Tohoku Univ, NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

关键词：

gallium compounds; III-V semiconductors; optical pulse generation; Q-switching; semiconductor lasers;

D O I：

10.1063/1.3299261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated extraordinary optical pulse generation with a peak-power of 55 W and pulse duration of 15 ps by intense electrical pulse excitation of a 401 nm GaInN laser diode (LD). Electrical pulse excitation of a GaInN LD which contained a thicker electron blocking layer gave rise to abnormal behavior with a several nanosecond-long delay and apparent Q-switching under intense excitation. Operation of this LD under such excitation was found to produce highly intense optical pulses even in semiconductor lasers with a single-transverse-mode.

引用

页数：3

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