Effects of substrate temperature on structural and optoelectronic properties of SnSe thin films by nebulized spray deposition for solar cell applications

被引:6
|
作者
Kumar, P. S. Satheesh [1 ]
Sangeetha, R. [2 ]
Sivakumar, R. [3 ]
Amalraj, L. [4 ]
机构
[1] AAA Coll Engn & Technol, Dept Phys, Sivakasi 626005, Tamil Nadu, India
[2] Mannar Thirumalai Naicker Coll, Dept Phys, Madurai 625004, Tamil Nadu, India
[3] PSNA Coll Engn & Technol, Dept Chem, Dindigul 624622, Tamil Nadu, India
[4] VHNSN Coll, PG & Res Dept Phys, Virudunagar, Tamil Nadu, India
关键词
SnSe thin films; X-ray diffraction; Band gap; Photoluminescence; SEM; Nebulized spray pyrolysis technique;
D O I
10.1016/j.matpr.2020.08.642
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
SnSe thin films were prepared by nebulized spray deposition method at different substrate temperature of 250-325 degrees C. The effects of deposition temperature on the structural, morphological, electrical and optical properties of the films were evaluated using XRD, SEM, Hall Effect, UV and PL. The X-ray diffraction study reveals that the all films present an orthorhombic structure of preferred orientation along the (111) direction. From the recorded optical data indicates the existence of direct allowed band gap in the range of 1.14-1.24 eV was obtained. The electrical resistivity shows that the prepared films are semiconducting nature and resistivity is found to be low at the temperature of 300 degrees C. (C) 2020 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2763 / 2769
页数:7
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