Air-stable n-type tellurium nanowires coordinated by large organic salts

被引:4
|
作者
Nonoguchi, Yoshiyuki [1 ,2 ]
Kamikonya, Fumihiko [1 ]
Ashiba, Koji [1 ]
Ohashi, Kenji [1 ]
Kawai, Tsuyoshi [1 ]
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Ikoma 6300192, Japan
[2] PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan
关键词
Doping; Thermoelectric; Tellurium; Nanowires; Onium salts; Crown ethers; TRANSISTORS; FILMS;
D O I
10.1016/j.synthmet.2016.11.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemically-synthesized semiconductor nanostructures have the potentials for the exploration of unprecedented electronic and thermoelectric properties. Such materials possess the surface area much larger than their bulk forms, resulting that surface chemical functionalization may alter electronic properties. Here we report on the modulation of majority carriers in semiconductor nanowires by the addition of organic salts. The p-type nanowires were successfully converted to n-type forms to which large cations such as onium ions and metal-crown ether complexes are coordinated. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:93 / 97
页数:5
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