Enhancement of phonological memory following Transcranial Magnetic Stimulation (TMS)

被引:32
|
作者
Kirschen, Matthew P.
Davis-Ratner, Mathew S.
Jerde, Thomas E.
Schraedley-Desmond, Pam
Desmond, John E.
机构
[1] Stanford Univ, Dept Radiol, Stanford, CA 94305 USA
[2] Stanford Univ, Neurosci Program, Stanford, CA 94305 USA
[3] Johns Hopkins Univ, Dept Neurol, Baltimore, MD 21205 USA
关键词
transcranial magnetic stimulation (TMS); verbal working memory (VWM); cognitive enhancement; neuroimaging; functional magnetic resonance imaging (fMRI); phonological memory;
D O I
10.1155/2006/469132
中图分类号
R74 [神经病学与精神病学];
学科分类号
摘要
Phonologically similar items (mell, tell, gell) are more difficult to remember than dissimilar items (shen, floy, stap), likely because of mutual interference of the items in the phonological store. Low-frequency transcranial magnetic stimulation (TMS), guided by functional magnetic resonance imaging (fMRI) was used to disrupt this phonological confusion by stimulation of the left inferior parietal (LIP) lobule. Subjects received TMS or placebo stimulation while remembering sets of phonologically similar or dissimilar pseudo-words. Consistent with behavioral performance of patients with neurological damage, memory for phonologically similar, but not dissimilar, items was enhanced following TMS relative to placebo stimulation. Stimulation of a control region of the brain did not produce any changes in memory performance. These results provide new insights into how the brain processes verbal information by establishing the necessity of the inferior parietal region for optimal phonological storage. A mechanism is proposed for how TMS reduces phonological confusion and leads to facilitation of phonological memory.
引用
收藏
页码:187 / 194
页数:8
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