Facile synthesis of highly π-extended heteroarenes, dinaphtho[2,3-b:2′,3′-f]chalcogenopheno[3,2-b]chalcogenophenes, and their application to field-effect transistors

被引：775

作者：

Yamamoto, Tatsuya

Takimiya, Kazuo ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

[2] Hiroshima Univ, Inst Adv Mat Res, Higashihiroshima 7398530, Japan

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2007年 / 129卷 / 08期

关键词：

D O I：

10.1021/ja068429z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A facile three-step synthetic procedure for highly pi-extended heteroarenes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) and dinaphtho[2,3-b:2',3'-f]selenopheno[3,2-b]selenophene (DNSS), was established. Solution UV-vis spectra and electrochemistry indicated that they have relatively low-lying HOMO levels and large HOMO-LUMO energy gaps. OFET devices fabricated with evaporated thin-films of DNTT and DNSS showed excellent FET characteristics in air, and the highest field-effect mobility of DNTT- and DNSS-based OFETs is 2.9 and 1.9 cm(2) V-1 s(-1), respectively.

引用

页码：2224 / +

页数：3

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