Structure and features of the surface morphology of A 4 B 6 chalcogenide epitaxial films

The structure and features of the surface morphology of Pb1 - x Mn (x) Se (x = 0.03) epitaxial films grown on freshly cleaved BaF2(111) faces and PbSe1 - x S (x) (100) (x = 0.12) single-crystal wafers were investigated by molecular beam condensation and the hot-wall method. It is shown that the epitaxial films, in accordance with the data in the literature for other chalcogenides, grow in the (111) and (100) planes, repeating the substrate orientation. Black aggregates are observed on the film surface of the films grown. The results obtained are compared with the data in the literature and generalized for other chalcogenides: A (4) B (6):Pb (S, Se, Te); Pb1 - x Sn (x) (S, Se, Te); and Pb1 - x Mn (Se, Te). It is established that the formation of black aggregates, which are second-phase inclusions on the surface of epitaxial films obtained by vacuum thermal deposition, is characteristic of narrow-gap A (4) B (6) chalcogenides.