Dynamics of generation of subpicosecond pulses in semiconductor injection lasers

被引：0

作者：

Andreev, AV ^{[1
]}

Valeev, AA ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia

来源：

QUANTUM ELECTRONICS | 2000年 / 30卷 / 02期

关键词：

D O I：

10.1070/QE2000v030n02ABEH001680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theory of the generation of subpicosecond pulses in semiconductor injection lasers taking into account multimode generation and a band structure of energy levels in doped semiconductors has been developed. Spatial-temporal dynamics of mode locking in a triple-section laser with a saturable absorber has been investigated. The analysis carried out has allowed us to determine the optimum conditions for the generation of ultimately short pulses. It has also permitted a study of the dependencies of parameters of the generated pulses on the pumping current, the reverse voltage, and a ratio of the lengths of the amplifying and absorbing sections.

引用

页码：167 / 170

页数：4

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