Influence of doping concentration on the properties of ZnO:Mn thin films by sol-gel method

被引：49
|
作者：
Chen, Wen
Wang, Jing [1 ]
Wang, Min-rui
机构：
[1] Dalian Univ Technol, Sch Elect & Informat Engn, Key Lab Micro Nano Technol & Syst Liaoning Prov, Dalian 116023, Peoples R China
[2] Dalian Univ Technol, MST Res Ctr, Dalian 116023, Peoples R China
来源：
VACUUM | 2007年 / 81卷 / 07期
基金：
中国国家自然科学基金;
关键词：
ZnO thin films; doping concentration; Mn; (002) peaks; resistivity; XPS;
D O I：
10.1016/j.vacuum.2006.10.010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of Mn-doped ZnO with different doping concentration (0.8, 1, 3, 5 at%,) were prepared on Pt/Ti/SiO2/Si substrates by using sol-gel method. The effects of the doping concentration on the structural properties, electrical characteristics and element binding energy in films were investigated. X-ray diffraction (XRD) results showed that the c-axis orientation of ZnO films was affected by Mn2+ content. Current-voltage (I-V) measurements indicated that resistivities of ZnO films were observably enhanced by dopant/of Mn2+ and the resistivities value increased with a doping level up to 5 at% Mn. X-ray photoelectron spectroscopy (XPS) patterns suggested that the binding energies of Ols and ZnL3M45M45 were affected by the content of Mn2+. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：894 / 898
页数：5
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