Thermally stimulated luminescence in full-size 4H-SiC wafers

被引：11

作者：

Ostapenko, S ^{[1
]}

Suleimanov, YM ^{[1
]}

Tarasov, I ^{[1
]}

Lulu, S ^{[1
]}

Saddow, SE ^{[1
]}

机构：

[1] Univ S Florida, Ctr Microelect Res, Tampa, FL 33620 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 48期

关键词：

D O I：

10.1088/0953-8984/14/48/392

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We performed non-contact and non-destructive spatially resolved characterization of traps and recombination centres in two-inch-diameter p-type 4H-SiC wafers using thermally stimulated luminescence (TSL) and scanning room temperature photoluminescence (PL). The TSL glow-curve maximum is located at about 190 K for the Al-doped wafers and the TSL spectrum has a maximum at 1.8 eV, which coincides with the spectrum of the 'red' PL band in the same crystal. The TSL intensity exhibits a noticeable inhomogeneity across the wafers. The spatial distribution shows a negative contrast compared to PL maps, indicating a variation of concentration of the TSL centres across the wafer. The origin of the centres is discussed.

引用

页码：13381 / 13386

页数：6

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