Ion beam mixing of an embedded Ta marker layer in Si induced by Al3, Cu2 and Ge2 clusters

被引：2

作者：

Shi, Ping ^{[1
]}

Ding, Fu-Rong ^{[1
]}

Wang, Yao ^{[1
]}

Nie, Rui ^{[1
]}

Ma, Hong-Ji ^{[1
]}

机构：

[1] Peking Univ, Dept Tech Phys, Beijing 100871, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 251卷 / 01期

关键词：

cluster; ion beam mixing; collective effect; nuclear energy loss; Rutherford backscattering;

D O I：

10.1016/j.nimb.2006.05.026

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Si films with an embedded Ta marker layer are irradiated by Al-n (n = 1, 3), Cu-n (n = 1, 2) and Ge-n (n = 1, 2). respectively. The profiles of Ta marker with and without irradiation are measured by using Rutherford backscattering (RBS). The more spreading of the profiles of Ta marker induced by the cluster irradiations is observed. The enhanced atomic mixing at the location of Ta marker layer is probably governed by the collective effect of the cluster constituents during the cluster irradiations. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：306 / 309

页数：4

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