Electric Control of the Magnetic Domains in Artificial Magnetoelectric Composite Heterostructure

被引:1
|
作者
Nong, H. T. T. [1 ]
Garcia-Sanchez, A. [1 ]
Ibrahim, C. [1 ]
Lan, N. T. [2 ]
Mercone, S. [1 ]
机构
[1] Univ Paris 13, CNRS, Lab Sci Procedes & Mat, UPR 3407, F-93430 Villetaneuse, France
[2] Thai Nguyen Univ Sci, Dept Phys & Nanotechnol, Thai Nguyen 250000, Vietnam
关键词
Magnetic domain; magnetic force microscopy (MFM); magnetization reversal; strain-mediated effect; FECUNBSIB THIN-FILMS; FIELD;
D O I
10.1109/TMAG.2018.2815556
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Magnetic force microscopy (MFM) has been used to probe the influence of an in situ applied in-plane elastic strains and/or magnetic field on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The film shows a typical magnetic stripe domain configuration with 180 nm magnetic domain width presenting its magnetic moments oriented perpendicularly to the film plane. The in-plane strain was induced via the application of a voltage in a piezoelectric (PE) actuator on which the film/substrate system was glued. The FeCuNbSiB film was deposited onto a compliant polyimide substrate (Kapton) in order to avoid clamping effects that can lead to low transmission of strains from the actuator to the film/substrate system. The instrumental setup was modified with a custom-built electromagnet for performing in situ MFM experiments under the application of an in-plane magnetic field. We could compare the strain-mediated effect upon the magnetic domain configuration with the effect of an applied magnetic field. This paper clearly shows a better-defined electric field/strain control of the local domain magnetization (size and orientation). The efficient coupling between the magnetostrictive properties of the FeCuNbSiB film and the PE ones of the actuators allows a complete switching of the out-of-plane domain magnetization toward an in-plane homogeneous magnetic one. This magnetoelectric heterostructure can thus open the way for new devices allowing the electric control of the magnetic information at the nanoscale level.
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页数:6
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