Atomistic simulations of dislocation-loop glidings in Al(111) nanoindentation

被引：0
|
作者：
Jun, S [1 ]
Lee, Y [1 ]
Kim, SY [1 ]
Im, S [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
来源：
ADVANCES IN FRACTURE AND FAILURE PREVENTION, PTS 1 AND 2 | 2004年 / 261-263卷
关键词：
molecular dynamics simulation; nanoindentation; ultra-thin film; dislocation nucleation; gliding of dislocation loop;
D O I：
10.4028/www.scientific.net/KEM.261-263.735
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Molecular dynamics simulation of nanoindentation on Al(III) surface is presented. The simulation is performed using the Ercolessi-Adams glue potential and the Berendsen thermostat. Boundary conditions of 'pseudo' thin film are imposed in order to focus on the dislocation motion in ultra-thin film. Nucleation and development of defects underneath the indenter tip are visualized, and the gliding patterns of dislocation loops are investigated with particular emphasis on the effect of film thickness. Simulation results show that the early emission of dislocation loop is highly dependent on the film thickness.
引用
收藏
页码：735 / 740
页数：6
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