Effect of antimony on the density of InAs/Sb:GaAs(100) quantum dots grown by metalorganic chemical-vapor deposition

被引：31

作者：

Guimard, Denis

Nishioka, Masao

Tsukamoto, Shiro

Arakawa, Yasuhiko

机构：

[1] Univ Tokyo, Inst Ind Sci, CNRS, Nanoelect Collaborat Res Ctr,UMI 2820,Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, CNRS, Lab Integrated Micro Mech Syst,UMI 2820,Meguro Ku, Tokyo 1538505, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / 548-552期

基金：

日本学术振兴会;

关键词：

nanostructure; metalorganic chemical-vapor deposition; semiconducting III-V material; semiconducting indium compound;

D O I：

10.1016/j.jcrysgro.2006.10.180

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the fabrication of high-density InAs quantum dots (QDs) grown on GaAs(I 0 0) substrate by metalorganic chemical-vapor deposition (MOCVD), obtained by antimony surfactant-mediated growth. We achieved InAs/Sb:GaAs QDs with dot density ranging from 2 x 10(10) cm to 2-11 X 10(11) cm(-2), with complete suppression of coalescence. We studied the dependence of the total dot density and the density of coalesced dots on the growth conditions, such as antimony irradiation time, growth temperature and growth rate. Strongly enhanced PL intensity at room temperature (RT) was obtained from InAs/Sb:GaAs QDs with density above 4 x 10(10) cm(-2), compared to reference InAs/GaAs QDs. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：548 / 552

页数：5

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