Selectively boron doped homoepitaxial diamond growth for power device applications

被引:7
|
作者
Lloret, F. [1 ]
Eon, D. [2 ]
Bustarret, E. [2 ]
Donatini, F. [2 ]
Araujo, D. [3 ]
机构
[1] Univ Cadiz, Dept Appl Phys, Cadiz 11510, Spain
[2] Univ Grenoble Alpes, Inst Neel, F-38000 Grenoble, France
[3] Univ Cadiz, Dept Mat Sci, Cadiz 11510, Spain
关键词
CATHODOLUMINESCENCE;
D O I
10.1063/5.0031478
中图分类号
O59 [应用物理学];
学科分类号
摘要
Diamond lateral growth is a powerful technique for the design and fabrication of diamond-based power electronic devices. Growth orientation affects the diamond deposition in terms of growth rate, surface roughness, and impurity incorporation. It has been shown that the finally grown surface of a patterned substrate can be predesigned based on the growth conditions. Thus, simultaneous growth along different surface orientations yields regions with different properties. In line with this, the incorporation of boron in a microwave plasma enhanced chemical vapor deposition laterally deposited epilayer over a mesa patterned {100}-oriented diamond substrate was studied by cathodoluminescence. It was observed that laterally oriented facets were highly boron doped in contrast to the {100}-oriented surfaces, which did not show any bound exciton emission, related to the doping. This study shows that, by designing the initial pattern and tuning the conditions, it is possible to drive a selective incorporation of boron into the grown layer.
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页数:5
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