SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency

被引：73

作者：

Pohl, Nils ^{[1
]}

Rein, Hans-Martin ^{[1
]}

Musch, Thomas ^{[1
]}

Aufinger, Klaus ^{[2
]}

Hausner, Josef ^{[1
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

[2] Infineon Technol AG, D-85579 Neubiberg, Germany

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2009年 / 44卷 / 10期

关键词：

Millimeter-wave VCOs; regenerative frequency divider; SiGe bipolar ICs; ultra-wideband; voltage-controlled oscillators; DESIGN;

D O I：

10.1109/JSSC.2009.2026822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SiGe millimeter-wave VCO with a center frequency around 80 GHz and an extremely wide (continuous) tuning range of 24.5 GHz (approximate to 30%) is presented. The phase noise at 1 MHz offset is -97 dBc/Hz at the center frequency (and less than -94 dBc/Hz in a frequency range of 21 GHz). The maximum total output power is about 12 dBm. A cascode buffer improves decoupling from the output load at reasonable VCO power consumption (240 mW at 5 V supply voltage). A low-power frequency divider (operating up to 100 GHz) provides, in addition, a divided-by-four signal. As a further intention of this paper, the basic reasons for the limitation of the tuning range in millimeter-wave VCOs are shown and the improvement by using two (instead of one) varactor pairs is demonstrated.

引用

页码：2655 / 2662

页数：8

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