Low temperature silicon nitride for surface passivation by PECVD technique

被引：0
|
作者：
Jana, T [1 ]
Ray, S [1 ]
机构：
[1] Indian Assoc Cultivat Sci, Energy Res Unit, Calcutta 700032, W Bengal, India
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon nitride films (SiNx:H) are developed by rf-PECVD technique using a gas mixture of SiH4 + NH3 and H-2 at a substrate temperature of 300 degrees C. The effect of deposition parameter on the film properties are studied by optical and infrared spectroscopy. The application of silicon nitride as the passivation layer and antireflection coating; on the front surface of c-Si solar cell has improved the short circuit current (I-sc) by 10.2 % and efficiency (eta) by 11.2 %.
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页码：845 / 848
页数：4
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