Diamond surface;
Surface charge transfer doping;
P-type doping;
Transition metal oxides;
Optical properties of diamond;
TOTAL-ENERGY CALCULATIONS;
LIGHT-DRIVEN DEGRADATION;
HYDROGENATED DIAMOND;
OPTICAL-PROPERTIES;
RATIONAL DESIGN;
CARBON NITRIDE;
CONDUCTIVITY;
SULFAMETHAZINE;
ADSORPTION;
DEVICES;
D O I:
10.1016/j.apsusc.2019.143604
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
In this study, a density functional theory method is employed to investigate the surface charge transfer doping of diamond by chromium trioxide (CrO3) with high electron affinity. Superior surface charge transfer of the hydrogenated diamond surface is demonstrated using CrO3 as an electron acceptor. The charge density difference and Bader charge analysis reveal that the electrons are transferred from the diamond surface to CrO3 molecule, leading to the formation of two-dimensional hole gas, and the holes left in the diamond surface increase the conductivity of the diamond surface. The analysis of electronic structure indicates that areal hole density as large as 9.85 x 10(13)cm(-2) for CrO3-doped diamond surface can be achieved. Besides, the optical absorption near infrared region of the hydrogenated diamond surface is greatly enhanced upon CrO3 doping, which implies that this CrO3-doped diamond surface is a promising candidate for optoelectronic materials. The present study provides an in-depth theoretical understanding of the formation of two-dimensional hole gas on diamond surface induced by a new transition metal oxide, and predicts that the CrO3-doped diamond surface may have important implications in electronic and optoelectronic devices.
机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Ma, Lai-Peng
Ren, Wencai
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Ren, Wencai
Cheng, Hui-Ming
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst TBSI, Shenzhen 518055, Guangdong, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China